MPQ3904

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor NPN Silicon 14 13 12 11 10 9 8 NPN 1234567 MPQ3904 Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous VCEO VCBO VEBO IC 40 60 6.0 200 Each Transistor Four Transistors Equal Power Vdc Vdc Vdc mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 500 4.0 900 mW 7.2 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 825 6.7 2.4 Watts 19.2 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Junction Junction to Case to Ambient Unit Thermal Resistance Each Die Effective, 4 Die 151 250 °C/W 52 139 °C/W Coupling Factors Q1–Q4 or Q2–Q3 34 70 % Q1–Q2 or Q3–Q4 2.0 26 % ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 40 Vdc, IC = 0) v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 40 60 6.0 — — Preferred devices are Motorola recommended choices for future use and best overall value. 14 1 CASE 646–06, STYLE 1 ...