IR03H420

www.DataSheet4U.com Data Sheet No. PD-6.077 IR03H420 HIGH VOLTAGE HALF-BRIDGE Features Product Summary VIN (max) ton/off trr RDS(on) PD (TA = 25 ºC) 500V 130 ns 270 ns 3.0Ω 2.0W n Output Power MOSFETs in half-bridge configuration n 500V Rated Breakdown Voltage n High side gate drive designed for bootstrap operation n Matched propagation delay for both channels n Independent high and low side output channels n Undervoltage lockout n 5V Schmitt-triggered input logic n Half-Bridge output in phase with HIN n Cross conduction prevention logic n Internally set dead time Description The IR03H420 is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a half-bridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the halfbridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. The device can operate up to 500 volts. Package IR03H420 9506 www.DataSheet4U.com Typical Connection U P V IN T O 5 0 0 V D C B U S IR 0 3 H 4 2 0 V C C 1 V C C V B 6 H IN 2 H IN 9 V IN L IN 3 L IN V O 7 T O 4 C O M L O A D C O M www.DataSheet4U www.DataSheet4U.c...