SUB75N03-04

www.DataSheet4U.com SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.004 ID (A) 75a TO-220AB TO-263 D G DRAIN connected to TAB DRAIN connected to TAB G D S G D S Top View SUP75N03-04 Top View SUB75N03-04 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IS IAR L = 0.1 mH L = 0.05 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d EAS EAR PD TJ, Tstg TO-220AB TL Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Repetitive Avalanche Energyb Maximum Power Dissipation "20 75a 75a 250 75 75 280 140 187c 3.7 www.DataSheet4U.com Limit Unit V A mJ W Operating Junction and Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) –55 to 175 300 _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75N03-04 Vishay Siliconix SPECIFICATIO...