SUB75N06-08

www.DataSheet4U.com SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB G D S Top View SUB75N06-08 S N-Channel MOSFET rDS(on) (W) 0.008 ID (A) 75a D G D S Top View SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) www.DataSheet4U.com Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IAR Limit "20 75a 55 240 60 280 187c Unit V Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d A EAR PD TJ, Tstg mJ W 3.7 –55 to 175 _C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter PCB Mount (TO-263)d Junction to Ambient Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283. A SPICE Model data sheet is available for this product (FaxBack document #70527). RthJA RthJC Symbol Limit 40 62.5 0.8 Unit _C/W Siliconix S-47969—Rev. D, 08-Jul-96 1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB75N06-08 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static DrainĆSource Breakdown Voltage Gate Thr...