SUB85N04-03

www.DataSheet4U.com SUP/SUB85N04-03 New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.0035 @ VGS = 10 V 0.0053 @ VGS = 4.5 V ID (A) 85 a TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP85N04-03 D S S N-Channel MOSFET Top View SUB85N04-03 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 125_C www.DataSheet4U.com Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 85a 85a 240 75 280 250c 3.75 –55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71124 S-00654—Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB85N04-03 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V...