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SUB85N10-10

Vishay Siliconix

N-Channel MOSFET


Description
SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V TO-220AB ID (A) 85a FEATURES TrenchFET® Power MOSFET 175 °C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC TO-263 D DRAIN connected to TAB GD S Top View SUP85N10-1...



Vishay Siliconix

SUB85N10-10

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