SUB65P06-20

www.DataSheet4U.com SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) –60 TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB65P06Ć20 D PĆChannel MOSFET rDS(on) (W) 0.020 ID (A) –65a S GD S Top View SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) www.DataSheet4U.com Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IAR Limit "20 –65a –39 –200 –60 180 187d Unit V Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c A EAR PD TJ, Tstg mJ W 3.7 –55 to 175 _C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction to Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289. A SPICE Model data sheet is available for this product (FaxBack document #70543). RthJA RthJC 62.5 0.8 Symbol RthJA Limit 40 Unit _C/W Siliconix P-39628—Rev. A, 28-Dec-94 1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB65P06-20 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Volt...