SUB15P01-52

www.DataSheet4U.com SUP/SUB15P01-52 Vishay Siliconix P-Channel 8-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.052 @ VGS = –4.5 V –8 0.070 @ VGS = –2.5 V 0.105 @ VGS = –1.8 V ID (A) –15 –10 –10.5 TO-220AB S TO-263 G DRAIN connected to TAB G G D S Top View SUP15P01-52 SUB15P01-52 P-Channel MOSFET D S Top View D www.DataSheet4U.com Parameter Symbol VDS VGS TC = 25_C TC = 125_C ID IDM IAR L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c EAR PD TJ, Tstg ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Limit –8 "8 –15 –8.7 –25 –10 5 25d 2.1 –55 to 175 W _C mJ A V Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Junction-to-Lead Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 71085 S-20966—Rev. C, 01-Jul-02 www.vishay.com PCB Mount (TO-263)c Symbol RthJA RthJC RthJL Typical 58 5 16 Maximum 70 6 20 Unit _C/W 1 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com SUP/SUB15P01-52 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –250 mA VDS...