STP3NC70ZFP

www.DataSheet4U.com N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH™III MOSFET TYPE STP3NC70Z STP3NC70ZFP s s STP3NC70Z STP3NC70ZFP VDSS 700V 700V RDS(on) < 4.7Ω < 4.7Ω ID 2.5 A 2.5 A s s s TYPICAL RDS(on) = 4.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP 3 1 2 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt (1) VISO Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (DC) www.DataSheet4U.com Value STP3NC70Z 700 700 ± 25 2.5 1.6 10 65 0.52 ±50 1.5 3 –65 to 150 150 (*) Limited by Maximum Temperature allowed Unit V V V 2.5 (*) 1.6 (*) 10 35 0.28 A A A W W/°C mA KV V/ns 2500 V °C °C 1/10 STP3NC70ZFP Gate source ESD(HBM-C=100pF, R=...