STP3NC50

www.DataSheet4U.com N-CHANNEL 500V - 3Ω - 2.8A TO-220 PowerMesh™II MOSFET TYPE STP3NC50 s s s s s STP3NC50 VDSS 500 V RDS(on) <4Ω ID 2.8 A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 2 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s TO-220 INTERNAL SCHEMATIC DIAGRAM www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt Tstg Tj . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 500 500 ±30 2.8 1.8 11.2 75 0.6 3 –60 to 150 150 (1)ISD ≤ 2.8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX Unit V V V A A A W W/°C V/ns °C °C ()Pulse width limited by safe operating area May 2001 1/8 www.DataSheet4U DataSheet4U.com www.DataSheet4U.com STP3NC50 THERMAL DATA Rthj-cas...