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Part Number K1329
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1329
Datasheet K1329 DatasheetK1329 Datasheet (PDF)

  K1329   K1329
2SK1328, 2SK1329 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1328, 2SK1329 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1328 2SK1329 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDSS Ratings 450 500 ±30 12 Unit V VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 V A A A W °C °C 48 12 60 150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 2 2SK1328, 2SK1329 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min 2SK1328 V(BR)DSS 2SK1329 V(BR)GSS I GSS 450 500 ±30 — — — — — — ±10 250 V µA µA I G = ±100 µA, VDS .



LM6405A K1329 D83-004


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