LS351

www.DataSheet4U.com LS350 LS351 LS352 Linear Integrated Systems MONOLITHIC DUAL PNP TRANSISTORS FEATURES HIGH GAIN TIGHT VBE MATCHING HIGH fT hFE ≥ 200 @ 10µA - 1mA |VBE1-VBE2| = 0.2mV TYP. 275MHz TYP. @ 1mA C1 C2 E1 3 5 E2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) IC Collector Current 10mA B1 2 6 B2 Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor -65° to +200°C +150°C ONE SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C 1 C1 B1 E1 E2 B2 7 C2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS350 LS351 LS352 Collector to Base Voltage 25 45 60 BVCBO BVCEO BVEBO BVCCO hFE hFE hFE Collector to Emitter Voltage Emitter to Base Voltage Collector to Collector Voltage 25 6.2 30 100 100 100 0.5 0.2 0.2 2 2 0.5 200 3 45 6.2 60 150 600 150 600 150 0.5 0.2 0.2 2 2 0.5 200 3 60 6.2 100 200 600 200 600 200 0.5 0.2 0.2 2 2 0.5 200 3 MIN. MIN. MIN. MIN. MIN. MAX. MIN. MAX. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX. UNITS V V V V IC = 10µA IC = 10µA IC = 10µA IE = 10µA CONDITIONS IC = 10µA IE = 0 IB = 0 IC = 0 NOTE 2 IE = 0 VCE= 5V VCE= 5V VCE= 5V IB = 0.1mA VCB = NOTE 3 VEB =3V VCB = 5V DC Current Gain DC Current Gain DC Current Gain Collector Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector to Collector Capacitance Collector to Collector Leakage Cu...