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STD30NE06
N - CHANNEL 60V - 0.025 Ω - 30A - DPAK STripFET™ " POWER MOSFET
PRELIMINARY DATA
TYPE...
www.DataSheet4U.com
®
STD30NE06
N - CHANNEL 60V - 0.025 Ω - 30A - DPAK STripFET™ " POWER MOSFET
PRELIMINARY DATA
TYPE STD30NE06
s s s s s
V DSS 60 V
R DS(on) < 0.03 Ω
ID 30 A
s
TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES
3 1
DPAK TO-252
(Suffix "T4")
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS Parameter Value 60 60 ± 20
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Unit V V V A A A W W/ o C V/ns
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Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Peak Diode Recovery voltage slope
o
V DGR V GS ID
30 21 120 55 0.37 7 -65 to 175 175
(1) ISD ≤20 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
ID
IDM ( ) P tot
Derating Factor
dv/dt T stg Tj
Storage Temperature M...