MRF247

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF247/D The RF Line NPN Silicon RF Power Transistor The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. Specified 12.5 Volt, 175 MHz Characteristics — Output Power = 75 Watts Power Gain = 7.0 dB Min Efficiency = 55% Min Characterized With Series Equivalent Large–Signal Impedance Parameters Internal Matching Network Optimized for Minimum Gain Frequency Slope Response Over the Range 136 to 175 MHz Load Mismatch Capability at Rated Pout and Supply Voltage MRF247 75 W, 175 MHz CONTROLLED Q RF POWER TRANSISTOR NPN SILICON CASE 316–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Symbol VCEO VCBO VEBO IC PD Tstg Value 18 36 4.0 20 250 1.43 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS taS hee t4U .co m Storage Temperature Range Characteristic Symbol RθJC Max 0.7 Unit °C/W Thermal Resistance, Junction to Case (2) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(B...