MRF240

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF240/D The RF Line NPN Silicon RF Power Transistors . . . designed for 13.6 volt VHF large–signal class C and class AB linear power amplifier applications in commercial and industrial equipment. High Common Emitter Power Gain Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.0 dB Min Efficiency = 55% Min Load Mismatch Capability at Rated Voltage and RF Drive Silicon Nitride Passivated Low Intermodulation Distortion, d3 = – 30 dB Typ MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 4.0 8.0 100 0.57 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF240 40 W, 145 – 175 MHz RF POWER TRANSISTORS NPN SILICON CASE 145A–09, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 1.75 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) Output Capacitance (VCB = 12....