SI1563DH

www.DataSheet4U.com Si1563DH New Product Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 FEATURES rDS(on) (W) 0.280 @ VGS = 4.5 V 0.360 @ VGS = 2.5 V 0.450 @ VGS = 1.8 V 0.490 @ VGS = -4.5 V ID (A) 1.28 1.13 1.00 -1.00 -0.81 -0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching APPLICATIONS D Load Switch for Portable Devices P-Channel -20 0.750 @ VGS = -2.5 V 1.10 @ VGS = -1.8 V D1 S2 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code EB G1 2 5 G2 XX YY G1 Lot Traceability and Date Code Part # Code S1 N-Channel Top View D2 P-Channel G2 D2 3 4 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage P-Channel 5 secs Steady State -20 "8 V -0.88 -0.63 -3.0 A -0.48 0.57 0.3 W _C Symbol VDS VGS TA = 25_C TA = 85_C ID IDM IS TA = 25_C TA = 85_C PD TJ, Tstg 5 secs Steady State 20 "8 Unit ww w.D ata Sh eet 4U .co m Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current 1.28 0.92 4.0 0.61 0.74 0.38 1.13 0.81 - 1.00 -0.72 Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa 0.48 0.57 0.30 -55 to 150 -0.61 0.30 0.16 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit Maximum Junction-to-Ambienta _C/W Maximum Junction-to-Foot (Drain) No...