PMV117EN

www.DataSheet4U.com PMV117EN µTrenchMOS™ enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level threshold s Subminiature surface-mounted package s Very fast switching 1.3 Applications s Battery management s High-speed switch s Low power DC-to-DC converter 1.4 Quick reference data s VDS ≤ 30 V s RDSon ≤ 117 mΩ (VGS = 10 V) s ID ≤ 2.5 A s Ptot ≤ 0.83 W 2. Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) 1 2 3 D Simplified outline Symbol G SOT23 mbb076 S www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors PMV117EN µTrenchMOS™ enhanced logic level FET 3. Ordering information Table 2: Ordering information Package Name PMV117EN TO-236AB Description plastic surface mounted package; 3 leads Version SOT23 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C...