NT5SV4M16DT

www.DataSheet4U.com NT5SV16M4DT NT5SV8M8DT NT5SV4M16DT 64Mb Synchronous DRAM Features High Performance: -6K fCK tCK CL tAC tAC Clock Frequency Clock Cycle CAS Latency Clock Access Time1 Clock Access Time2 166 6 133 7.5 143 7 -7K 133 7.5 CL=2 — 5.4 -7 143 7 CL=3 — 5.4 Units MHz ns CKs ns ns CL=3 CL=2 CL=3 --5.4 — 5.4 --5.4 1. Terminated load. See AC Characteristics on page 16. 2. Unterminated load. See AC Characteristics on page 16. Single Pulsed RAS Interface Fully Synchronous to Positive Clock Edge Four Banks controlled by BS0/BS1 (Bank Select) Programmable CAS Latency: 2, 3 Programmable Burst Length: 1, 2, 4, 8, Full page Programmable Wrap: Sequential or Interleave Multiple Burst Read with Single Write Option Automatic and Controlled Precharge Command Data Mask for Read/Write control (x4, x8) Dual Data Mask for byte control (x16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode Standard Power operation 4096 refresh cycles/64ms Random Column Address every CK (1-N Rule) Single 3.3V ± 0.3V Power Supply LVTTL compatible Package: 54-pin 400 mil TSOP-Type II Description The NT5SV16M4DT, NT5SV8M8DT, and NT5SV4M16DT are four-bank Synchronous DRAMs organized as 4Mbit x 4 I/O x 4 Bank, 2Mbit x 8 I/O x 4 Bank, and 1Mbit x 16 I/O x 4 Bank, respectively. These synchronous devices achieve high-speed data transfer rates of up to 200MHz by employing a pipeline chip architecture that synchronizes the output data to a system c...