TIP36

TIP35 TIP35A TIP35B TIP35C NPN TIP36 TIP36A TIP36B TIP36C PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TIP35 SYMBOL TIP36 VCBO 40 VCEO 40 VEBO IC ICM IB PD TJ, Tstg ΘJC TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C 60 80 100 60 80 100 5.0 25 40 5.0 125 -65 to +150 1.0 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=30V (TIP35, TIP35A, TIP36, TIP36A) ICEO VCE=60V (TIP35B, TIP35C, TIP36B, TIP36C) ICES VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP35, TIP36) 40 BVCEO IC=30mA (TIP35A, TIP36A) 60 BVCEO IC=30mA (TIP35B, TIP36B) 80 BVCEO IC=30mA (TIP35C, TIP36C) 100 VCE(SAT) IC=15A, IB=1.5A VCE(SAT) IC=25A, IB=5.0A VBE(ON) VCE=4.0V, IC=15A VBE(ON) VCE=4.0V, IC=25A hFE VCE=4.0V, IC=1.5A 25 hFE VCE=4.0V, IC=15A 10 hfe VCE=10V, IC=1.0A, f=1.0kHz 25 fT VCE=10V, IC=1.0A, f=1.0MHz 3.0 MAX 1.0 1.0 0.7 1.0 1.8 4.0 2.0 4.5 10...