C1815

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature Value -60 -50 -5 150 200 -55-150 Units V V V mA mW ℃ TRANSISTOR (NPN) TO—92 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector Output Capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) fT Cob NF unless Test otherwise MIN 60 50 5 IE=0 IB=0 IC=0 IC= 2mA 70 specified） TYP MAX UNIT V V V 0.1 0.1 0.1 700 0.25 1 V V MHz 3.5 10 pF dB uA uA uA conditions Ic= 100 uA, IE=0 Ic= 0. 1 mA, IB=0 IE= 100 uA, IC=0 VCB= 60 VCE= 50 VEB= VCE= 5 V, V, V, 6 V, IC= 100mA, IB= 10 mA IC= 100 mA, IB= 10mA VCE= 10 V, IC= 1mA f=30MHz VCB=10V,IE=0 f=1MHZ VCE= 6 V, IC=0.1 mA f =1KHz,RG=10K 80 CLASSIFICATION OF Rank hFE(1) O Y 120-24...