PH3330L

www.DataSheet4U.com PH3330L N-channel TrenchMOS logic level FET Rev. 01 — 1 February 2006 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Optimized for use in DC-to-DC converters s Logic level compatible s Very low switching and conduction losses s Lead-free package 1.3 Applications s DC-to-DC converters s Voltage regulators s Switched-mode power supplies s Notebook computers 1.4 Quick reference data s VDS ≤ 30 V s RDSon ≤ 3.3 mΩ s ID ≤ 100 A s QGD = 6.9 nC (typ) 2. Pinning information Table 1: Pin 1, 2, 3 4 mb Pinning Description source (S) gate (G) mounting base; connected to drain (D) mb D Simplified outline Symbol G mbb076 S 1 2 3 4 SOT669 (LFPAK) www.DataSheet4U.com www.DataSheet4U.com Philips Semiconductors PH3330L N-channel TrenchMOS logic level FET 3. Ordering information Table 2: Ordering information Package Name PH3330L LFPAK Description plastic single-ended surface mounted package (LFPAK); 4 leads Version SOT669 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current Tmb = 25 °C Tmb = 25 °...