STW45NM50

STW45NM50 N-channel 500 V, 0.08 Ω typ., 45 A MDmesh™ Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STW45NM50 VDS 500 V RDS(on) max 0.1 Ω ID 45 A  100% avalanche tested  High dv/dt and avalanche capabilities  Low input capacitance and gate charge  Low gate input resistance Applications  Switching applications Description This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. This device offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market. Order code STW45NM50 Table 1: Device summary Marking Package W45NM50 TO-247 Packaging Tube July 2016 DocID8477 Rev 6 This is information on a product in full production. 1/12 www.st.com Contents Contents STW45NM50 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Pac...