PN150

www.DataSheet4U.com Phototransistors PNZ150 (PN150) Silicon planar type Unit: mm For optical control systems φ3.5±0.2 4.8±0.3 (2.4) (2.4) 4.5±0.3 Not soldered 4.2±0.3 (2.3) (1.9) ■ Features High sensitivity Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs Low dark current Side-view plastic mold type package (2.8) 12.8 min. (1.8) (1.0) 2-0.98±0.2 10.0 min. 2-0.45±0.15 0.45±0.15 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-emitter voltage (Base open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Rating 20 20 100 −25 to +85 −30 to +100 Unit V mA mW °C °C (R1.75) (2.54) (1.2) 1 2 1: Emitter 2: Collector LSTLR102-003 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Photocurrent Dark current Peak emission wavelength Half-power angle Rise time *2 Fall time *2 *1 Symbol ICE(L) ICEO λp θ tr tf VCE(sat) VCE = 10 V VCE = 10 V Conditions VCE = 10 V, L = 500 lx Min 1.0 Typ 3.0 0.01 800 35 4 4 Max Unit mA µA nm ° µs µs 1.00 The angle from which photocurrent becomes 50% VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω ICE(L) = 1 mA, L = 1 000 lx Collector-emitter saturation voltage *1 0.2 0.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This ...