HN29V2G74WT-30

HN29V2G74WT-30 (128M × 8-bit) ×2 AG-AND Flash Memory REJ03C0182-0200Z Rev. 2.00 Jul.21.2004 Description The HN29V2G74 is a 2G-bit AG-AND flash memory. It mounts two 1G-bit AG-AND flash memories with multi-level memory cells, which are programmable and erasable automatically with a single 3.0 V power supply. It achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist Gate-AND) type Flash memory cell using multi level cell technology provides both the most cost effective solution and high speed programming. Features On-board single power supply: VCC = 2.7 V to 3.6 V Operation Temperature range: Ta = 0 to +70°C Memory organization  Memory array: (2048+64) bytes × 16384 page × 4 Bank × 2  Page size: (2048+64) bytes × 2  Block size: (2048+64) bytes × 2 page × 2  Page Register: (2048+64) bytes × 4 Bank × 2 Multi level memory cell  2bit/cell Automatic program  Page program  Multi bank program  Cache program  2 page cache program Automatic Erase  Block Erase  Multi Bank Block Erase Access time  Memory array to register (1st access time): 120 µs max  Serial access: 35 ns min Rev.2.00, Jul.21.2004, page 1 of 91 HN29V2G74WT-30 Low power dissipation  ICC1 = 10 mA (typ) : Read (50 ns cycle) (1-chip operation)  ICC1 = 20 mA (typ) : Read (50 ns cycle) (2-chip operation)  ICC2 = 15 mA (typ) : Read (35 ns cycle) (1-chip operation)  ICC2 = 30 mA...