256M AND Type Flash Memory
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HN29V25611AT-50H
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
ADE-203-1334...
Description
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HN29V25611AT-50H
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
ADE-203-1334A (Z) Rev. 1.0 Apr. 5, 2002 Description
The Hitachi HN29V25611AT-50H Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29V25611AT-50H are more than 16,057 (98% of all sector address) and less than 16,384 sectors.
Features
On-board single power supply (VCC): VCC = 2.7 V to 3.6 V Organization AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors) Data register: (2048 + 64) bytes Multi-level memory cell 2 bit/per memory cell Automatic programming Sector program time: 1.0 ms (typ) System bus free Address, data latch function Internal automatic program verify function Status data polling function Automatic erase Single sector erase time: 1.0 ms (typ) System bus free Internal automatic erase verify function Status data polling function
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HN29V25611AT-50H
Erase mode Single sector erase ((2048 + 64) byte unit) Fast serial read access time: First access time: 50 µs (max) Serial access time: 50 ns (max) Low power dissipation: ICC1 = 2 mA (typ) (Read) ICC2 = 20 mA (max) (...
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