K1338

2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB ADE-208-1275 (Z) 1st. Edition Mar. 2001 D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1338 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 µs, duty cycle 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings Unit 900 V ±30 V 2 A 6 A 2 A 50 W 150 °C –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Drain to source breakdown voltage V(BR)DSS 900 — Gate to source breakdown voltage V(BR)GSS ±30 — Gate to source leak current I GSS — — Zero gate voltage drain current IDSS — — Gate to source cutoff voltage VGS(off) 2.0 — Static drain to source on state RDS(on) — 5.0 resistance Forward transfer admittance |yfs| 0.9 1.5 Input capacitance Ciss — 425 Output capacitance Coss — 175 Reverse transfer capacitance Crss — 85 Turn-on delay time t d(on) — 10 Rise time tr — 35 Turn-off delay time t d(off) — 60 Fall time tf — 50 Body to drain diode forward VDF — 0.9 voltage Body to drain diode reverse trr recovery time — 700 N...