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DATA SHEET
SILICON POWER TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL TRANSISTOR ...
( DataSheet : www.DataSheet4U.com )
DATA SHEET
SILICON POWER
TRANSISTOR
2SA1648,1648-Z
PNP SILICON EPITAXIAL
TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1648 is a mold power
transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage.
This
transistor is ideal for use in switching
regulators, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for high-current switching.
PACKAGE DRAWINGS (Unit: mm)
+0.2 −0.1
6.5 ±0.2 5.0 ±0.2
4
1.5
2.3 ±0.2 0.5 ±0.1
7.0 MIN. 5.5 ±0.2 13.7 MIN.
1.6 ±0.2
FEATURES
Available for high-current control in small dimension Z type is a lead processed product and is deal for mounting a
hybrid IC. Mold package that does not require an insulating board or
insulation bushing Low collector saturation voltage:
VCE(sat)1 = −0.3 V MAX. (IC = −3.0 A) Fast switching speed:
tf = 0.3 µs MAX. (IC = −3.0 A) High DC current gain and excellent linearity
123 1.1 ±0.2
2.3 2.3
0.5
+0.2 −0.1
0.5
+0.2 −0.1
0.75
TO-251 (MP-3)
1.5-+00..12
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage
Symbol VCBO
Ratings −100
Unit V
6.5±0.2 5.0±0.2
4
2.3±0.2 0.5±0.1
1.0 MIN. 0.7 1.8TYP.
10.0 MAX.
5.5±0.2
0.8 4.3 MAX.
Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse)
VCEO VEBO IC(DC) I Note 1
C(pulse)
−60 −7.0 −5.0 −10
V V A A
123
2.0 MIN.
1.1±0.2
2.3 2.3
0.9 0.8 MAX....
