High speed IGBT
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A
VCES
600 V 600 V
IC25
75 A 75 A
VCE(sat)
2.5 V ...
Description
Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A
VCES
600 V 600 V
IC25
75 A 75 A
VCE(sat)
2.5 V 3.0 V
Symbol
Test Conditions
VCES V
CGR
VGES V
GEM
IC25 IC90 I
CM
SSOA (RBSOA)
P C
TJ TJM T
stg
Md
Weight
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GE
=
1
MΩ
Continuous
Transient
TC = 25°C, limited by leads TC = 90°C
T C
= 25°C, 1 ms
VGE= 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µH
T C
= 25°C
Mounting torque (M3)
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600 V 600 V
±20 V ±30 V
75 A 40 A 150 A
ICM = 80 @ 0.8 VCES
250
A W
-55 ... +150 150
-55 ... +150
°C °C °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
300 °C
Symbol
BV CES
VGE(th) ICES
I GES
V CE(sat)
Test Conditions
Characteristic Values
(T J
=
25°C,
unless
otherwise
specified)
min. typ. max.
I C
=
250
µA,
V GE
=
0
V
IC = 250 µA, VCE = VGE
VCE = 0.8 VCES V =0V
GE
V CE
=
0
V,
V GE
=
±20
V
I = I , V = 15 V C C90 GE
TJ = 25°C
T J
=
125°C
40N60 40N60A
600 2.5
V 5V
200 µA 1 mA
±100 nA
2.5 V 3.0 V
TO-247 AD (IXGH)
G C E
TO-204 AE (IXGM)
G = Gate, E = Emitter,
C
C = Collector, TAB = Collector
Features l International standard packages l 2nd generation HDMOSTM process l Low V
CE(sat)
- for low on-state conduction losses l High current handling capability l MOS Gate turn-on
- drive simplicity l Voltage rating guaranteed at high
temperature (125°C)
Applications l AC moto...
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