DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3057
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This produc...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3057
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effect
Transistor
designed for high current switching application.
FEATURES Low on-state resistance
RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A) Low Ciss: Ciss = 2100 pF TYP. Built-in gate protection diode Isolated TO-220 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3057
Isolated TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Gate to Source Voltage
VGSS(DC)
Drain Current (DC) Drain Current (pulse) Note1
ID(DC) ID(pulse)
Total Power Dissipation (Tc = 25°C)
PT
Total Power Dissipation (Ta = 25°C)
PT
Channel Temperature
Tch
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg IAS EAS
60 ±20 +20, –10 ±45 ±150 30 2.0 150 –55 to +150 22.5 50.6
Notes 1. PW ...