www.DataSheet4U.net
STH15NA50/FI STW15NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STH15NA50 STH15N...
www.DataSheet4U.net
STH15NA50/FI STW15NA50
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS
TRANSISTOR
TYPE STH15NA50 STH15NA50FI STW15NA50
s s s s s s s
V DSS 500 V 500 V 500 V
R DS( on) < 0.4 Ω < 0.4 Ω < 0.4 Ω
ID 14.6 A 9.3 A 14.6 A
TO-247
TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-218
1
3 2 1
3
3 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
s
2
ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value STH/STW15NA50 VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Unit
STH15NA50FI V V V 9.3 5.5 58.4 80 0.64 4000 A A A W W/o C V
o o
50...