2SK3564

( DataSheet : www.DataSheet4U.com ) TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3564 2SK3564 unit Switching Regulator Applications 10±0.3 φ3.2±0.2 2.7±0.2 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 TBD 3 4.0 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.15 2.8Max V V V 2.54±0.25 0.64±0.15 2.54±0.25 1 2 3 2.6 12.5 Min. 4.5±0.2 1.1 1.1 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1. 2. 3. Gate Drain Source JEDEC JEITA TOSHIBA Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W 15.0±0.3 Low drain-source ON resistance: RDS (ON) = 3.7 (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) A (VDS = 720 V) Low leakage current: IDSS = 100 Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 3.9 3.0 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C, L = TBD mH, IAR = 3.0 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrost...