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STF817 STN817
PNP MEDIUM POWER TRANSISTORS
Type STF817 STN817
s
Marking 817 N817
s
SURFACE-M...
www.DataSheet4U.com
®
STF817 STN817
PNP MEDIUM POWER
TRANSISTORS
Type STF817 STN817
s
Marking 817 N817
s
SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES AVAILABLE IN TAPE & REEL PACKING
2
APPLICATIONS s VOLTAGE REGULATION s RELAY DRIVER s GENERIC SWITCH DECRIPTION The STF817 and STN817 are
PNP transistors manufactured using Planar Technology resulting in rugged high performance devices.
1
SOT-223
2
3
SOT-89
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Devices Packages V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value STN817 SOT-223 -120 -80 -5 -1.5 -2 -0.3 -0.6 1.6 -65 to 150 150 1.4 STF817 SOT-89 V V V A A A A W o C o C Unit
April 2002
1/5
STF817 - STN817
THERMAL DATA
SOT-223 R thj-amb Thermal Resistance Junction-ambient
2
SOT-89 89
o
Max
78
C/W
Device mounted on a PCB area of 1 cm .
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = -120 V V CE = -80 V V EB = -5 V I C = -10 mA -80 Min. Typ. Max. -500 -1 -100 Unit µA mA µA V
V CEO(sus)...