IS61VF12836A

( DataSheet : www.DataSheet4U.com ) IS61(64)LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM ISSI PRELIMINARY INFORMATION AUGUST 2005 ® FEATURES Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data and control Burst sequence control using MODE input Three chip enable option for simple depth expansion and address pipelining Common data inputs and data outputs Auto Power-down during deselect Single cycle deselect Snooze MODE for reduced-power standby Power Supply LF: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5% VF: VDD 2.5V -5% +10%, VDDQ 2.5V -5% +10% JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages Automotive temperature available Lead-free available IS64VF12832A, IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF12832A is organized as 131,072 words by 32 bits. The IS61(64)LF/VF12836A is organized as 131,072 words by 36 bits. The IS61(64)LF/VF25618A is organized as 262,144 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through r...