SM12GZ47A

SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A AC POWER CONTROL APPLICATIONS Repetitive Peak off−State Voltage R.M.S On−State Current High Commutating (dv / dt) Isolation Voltage : VIsol = 1500V AC : VDRM = 400V, 600V : IT (RMS) = 12A Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage SM12GZ47 SM12GZ47A SM12JZ47 SM12JZ47A SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM IGM Tj Tstg VIsol 2 UNIT V R. M. S. On−state Current (Full Sine Waveform TC = 72°C) Peak One Cylce Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 2 12 120 (50Hz) 132 (60Hz) 72 50 5 0.5 10 2 −40~125 −40~125 1500 A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA ― ― 13-10H1A Weight: 1.7 g (typ.) Note 1: di / dt test condition VDRM = 0.5 × Rated ITM ≤ 17A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 1 2004-07-06 SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I SM12GZ47 SM12JZ47 Gate Trigger Current SM12GZ47A SM12JZ47A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage ...