STT3PF20V

( DataSheet : www.DataSheet4U.com ) STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET™ II POWER MOSFET TYPE STT3PF20V s s s VDSS !ÃW RDS(on) 1Ã!ÃWÃ5#$W 1Ã!$ÃWÃ5!&W ID !!Ã6 s TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s CELLULAR MARKING s STP2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(œ) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kW) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 20 20 ± 12 2.2 1.39 8.8 1.6 Unit V V V A A A W Total Dissipation at TC = 25°C Ptot (œ) Pulse width limited by safe operating area. October 2002 . Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 www.DataSheet4U.com www.DataSheet4U.com STT3PF20V THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Max. Operating Junction Temperatur...