MRF158

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF158/D The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55% (Typ) Facilitates Manual Gain Control, ALC and Modulation Techniques To 500 MHz, 2 W, 28 V TMOS BROADBAND RF POWER FET ARCHIVE INFORMATION 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR Excellent Thermal Stability, Ideally Suited for Class A Operation Circuit board sample available upon request by contacting RF Tactical Marketing in Tempe, AZ. S–Parameters Available for Download into Frequency Domain Simulators. See http://mot–sps.com/rf/designtds/ D G CASE 305A–01, STYLE 2 S MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ±20 0.5 8.0 45 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 13.2 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS device...