MRF1518NT1

( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1518 Rev. 6, 3/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 12.5 volt mobile FM equipment. Specified Performance @ 520 MHz, 12.5 Volts Output Power — 8 Watts D Power Gain — 11 dB Efficiency — 55% Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters G RF Power Plastic Surface Mount Package Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request N Suffix Indicates Lead - Free Terminations S Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1518NT1 MRF1518T1 520 MHz, 8 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature (1) Symbol VDSS VGS ID PD Tstg TJ Value - 0.5, +40 ± 20 4 62.5 0.50 - 65 to +150 150 Unit Vdc Vdc Adc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Juncti...