RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
Description
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Freescale Semiconductor Technical Data
MRF1511 Rev. 3, 3/2005
RF Power Field Effect Transistor
N−Channel Enhancement−Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large−signal, common...
