MRF1513T1

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1513/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. D Specified Performance @ 520 MHz, 12.5 Volts Output Power — 3 Watts Power Gain — 11 dB Efficiency — 55% Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive Excellent Thermal Stability G Characterized with Series Equivalent Large–Signal Impedance Parameters Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request S RF Power Plastic Surface Mount Package Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1513T1 520 MHz, 3 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 466–02, STYLE 1 (PLD–1.5) PLASTIC MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 40 ±20 2 31.25 0.25 –65 to +150 150 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated bas...