NTF3055L175

( DataSheet : www.DataSheet4U.com ) NTF3055L175 Preferred Device Power MOSFET 2.0 A, 60 V, Logic Level N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com Pb−Free Packages are Available Applications 2.0 A, 60 V RDS(on) = 175 mW N−Channel D Power Supplies Converters Power Motor Controls Bridge Circuits G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL(pk) = 3.6 A, L = 10 mH, VDS = 60 Vdc) Thermal Resistance − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS Value 60 60 ± 15 ± 20 2.0 1.2 6.0 2.1 1.3 0.014 −55 to 175 65 Unit Vdc Vdc Vdc Vpk Adc 1 4 S 2 3 SOT−223 CASE 318E STYLE 3 ID ID IDM PD MARKING DIAGRAM Apk W W W/°C °C mJ 5L175 L WW = Device Code = Location Code = Work Week 5L175 LWW TJ, Tstg EAS PIN ASSIGNMENT 4 Drain °C/W RqJA RqJA TL 72.3 11...