TC59LM806CFT

( DataSheet : www.DataSheet4U.com ) TC59LM814/06CFT-50,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS × 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network FCRAMTM containing 268,435,456 memory cells. TC59LM814CFT is organized as 4,194,304-words × 4 banks s× 16 bits, TC59LM806CFT is organized as 8,388,608 words × 4 banks × 8 bits. TC59LM814/06CFT feature a fully synchronous operation referenced to clock edge whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. TC59LM814/06CFT can operate fast core cycle using the FCRAMTM core architecture compared with regular DDR SDRAM. TC59LM814/06CFT is suitable for Network, Server and other applications where large memory density and low power consumption are required. The Output Driver for Network FCRAMTM is capable of high quality fast data transfer under light loading condition. FEATURES PARAMETER -50 tCK tRC tRAC Clock Cycle Time (min) CL = 3 CL = 4 5.5 ns 5 ns 25 ns 22 ns 190 mA 2 mA 3 mA TC59LM814/06 -60 6.5 ns 6 ns 30 ns 26 ns 170 mA 2 mA 3 mA Random Read/Write Cycle Time (min) Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max) Fully Synchronous Operation Double Data Rate ...