Part Number |
MB84VD23381HJ |
Manufacturers |
Fujitsu Media Devices |
Logo |
|
Description |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM |
Datasheet |
MB84VD23381HJ Datasheet (PDF) |
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50312-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64M (×16) FLASH MEMORY & 16M (×16) Mobile FCRAMTM
MB84VD23381HJ-70
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V • High Performance
70 ns maximum random access time (Flash) 60 ns maximum random access time (FCRAM) • Operating Temperature –30 °C to +85 °C • Package 56-ball BGA
s PRODUCT LINEUP
Flash
Supply Voltage (V)
Max Random Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns)
+0.1 V
VCCf* = 3.0 V –0.3 V 70 70 30
* : Both VCCf and VCCr must be the same level when either part is being accessed.
s PACKAGE
56-ball plastic FBGA
(Continued)
FCRAM
+0.1 V
VCCr* = 3.0 V –0.3 V 60 60 35
BGA-56P-M04
MBVD23381HJ-70
(Continued) — FLASH MEMORY • Simultaneous Read/Write operations (Dual Bank) • FlexBankTM*1 Bank A : 8 Mbit (8 KB × 8 and 64 KB × 15) Bank B : 24 Mbit (64 KB × 48) Bank C : 24 Mbit (64 KB × 48) Bank D : 8 Mbit (8 .