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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50301-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64 M (×16) FLASH MEMORY & 16 M (×16) Mobile FCRAMTM
MB84VD23381EF-85
s FEATURES
• Power Supply Voltage of 2.7 V to 3.0 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash • High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM)
(Continued)
s PRODUCT LINE UP
Flash Memory VCCf = 2.7 V to 3.3 V Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) 85 85 35 FCRAM* VCCs = 2.7 V to 3.0 V 85 85 60
* : Both VCCf and VCCs must be the same level when either part is being accessed and VCCf can be 2.4 V during standby state.
s PACKAGE
101-ball plastic FBGA
(BGA-101P-M01)
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MB84VD23381EF-85
(Continued) • Operating Temperature −30 °C to +85 °C • Package 101-ball FBGA
− FLASH MEMORY • Simultaneous Read/Write Operations (FlexBankTM) Two virtual Bank.