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Part Number MB84VD23381EF
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description Flash Memory / SRAM
Datasheet MB84VD23381EF DatasheetMB84VD23381EF Datasheet (PDF)

  MB84VD23381EF   MB84VD23381EF
( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50301-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M (×16) FLASH MEMORY & 16 M (×16) Mobile FCRAMTM MB84VD23381EF-85 s FEATURES • Power Supply Voltage of 2.7 V to 3.0 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash • High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM) (Continued) s PRODUCT LINE UP Flash Memory VCCf = 2.7 V to 3.3 V Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) 85 85 35 FCRAM* VCCs = 2.7 V to 3.0 V 85 85 60 * : Both VCCf and VCCs must be the same level when either part is being accessed and VCCf can be 2.4 V during standby state. s PACKAGE 101-ball plastic FBGA (BGA-101P-M01) www.DataSheet4U.com www.DataSheet4U.com MB84VD23381EF-85 (Continued) • Operating Temperature −30 °C to +85 °C • Package 101-ball FBGA − FLASH MEMORY • Simultaneous Read/Write Operations (FlexBankTM) Two virtual Bank.



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