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FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50209-4E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64 M ( × 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM
MB84VD23381EJ-85/90
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash • High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM) • Operating Temperature −30 °C to +85 °C • Package 101-ball FBGA
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s PRODUCT LINE-UP
Flash Memory Power Supply Voltage ( V ) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) VCCf* = 2.7 V to 3.3 V 85 85 35 FCRAM VCCs* = 2.7 V to 3.1 V 85 85 50
*: Both VCCf and VCCs must be the same level when either part is being accessed.
s PACKAGE
101-ball plastic FBGA
(BGA-101P-M01) MB84VD23381EJ-90 guarantees both FCRAM and Flash at 85 ns Access Cycle.
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MB84VD23381EJ-85/90
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• FLASH ME.