Part Number |
MB84VD2002 |
Manufacturers |
Fujitsu Media Devices |
Logo |
|
Description |
(MB84VD2002 / MB84VD2003) 8M (x 8/x 16) FLASH MEMORY & 2M (x 8) STATIC RAM |
Datasheet |
MB84VD2002 Datasheet (PDF) |
( DataSheet : www.DataSheet4U.com )
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50110-1E
MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
8M (× 8/× 16) FLASH MEMORY & 2M (× 8) STATIC RAM
MB84VD2002-10/MB84VD2003-10
s FEATURES
• Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Simultaneous operations Read-while Erase or Read-while-Program • Minimum 100,000 write/erase cycles • Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture MB84VD2002: Top sector MB84VD2003: Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completio.