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Part Number MB84VD2009
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description (MB84VD2008 / MB84VD2009) 8M (x 16) FLASH MEMORY & 2M (x 16) STATIC RAM
Datasheet MB84VD2009 DatasheetMB84VD2009 Datasheet (PDF)

  MB84VD2009   MB84VD2009
( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50111-1E MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 8M (× 16) FLASH MEMORY & 2M (× 16) STATIC RAM MB84VD2008-10/MB84VD2009-10 s FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature –20 to +85°C — FLASH MEMORY • Simultaneous operations Read-while Erase or Read-while-Program • Minimum 100,000 write/erase cycles • Sector erase architecture Two 16 K byte, four 8 K bytes, two 32 K byte, and fourteen 64 K bytes. Any combination of sectors can be concurrently erased. Also supports full chip erase. • Boot Code Sector Architecture MB84VD2008: Top sector MB84VD2009: Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address • Data Polling and Toggle Bit feature for detection of program or erase cycle completion •.



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