Part Number |
MB84VD2219xEH |
Manufacturers |
Fujitsu Media Devices |
Logo |
|
Description |
(MB84VD2218xEG/EH / MB84VD2219xEG/EH) 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM |
Datasheet |
MB84VD2219xEH Datasheet (PDF) |
( DataSheet : www.DataSheet4U.com )
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50206-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM
CMOS
32M (× 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM
MB84VD2218XEG-90/MB84VD2219XEG-90 MB84VD2218XEH-90/MB84VD2219XEH-90
s FEATURES
• Power supply voltage of 2.7 V to 3.3 V • High performance 90 ns maximum access time (Flash) 85 ns maximum access time (SRAM) • Operating Temperature –25°C to +85°C • Package 71-ball BGA
(Continued)
s PRODUCT LINE UP
Flash Memory Ordering Part No. VCCf,VCCs = 3.0 V
+0.3 V –0.3 V
SRAM
MB84VD2218XEG/EH-90/MB84VD2219XEG/EH-90 90 90 40 85 85 45
Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns)
s PACKAGE
71-ball plastic FBGA
(BGA-71P-M02)
www.DataSheet4U.com
www.DataSheet4U.com
MB84VD2218XEG/EH/2219XEG/EH-90
(Continued)
1.FLASH MEMORY • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes Host system can program or erase in one bank.