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STTA506F Dataheets PDF



Part Number STTA506F
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (STTA506x) TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
Datasheet STTA506F DatasheetSTTA506F Datasheet (PDF)

( DataSheet : www.DataSheet4U.com ) ® STTA506D/F/B TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE : ISOWATT220AC Electrical insulation : 2000VDC Capacitance < 12 pF DESCRIPTION The TURBOSWITCH is a v.

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( DataSheet : www.DataSheet4U.com ) ® STTA506D/F/B TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE : ISOWATT220AC Electrical insulation : 2000VDC Capacitance < 12 pF DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all "freewheel mode" operations ABSOLUTE RATINGS (limiting values) Symbol VRRM VRSM IF(RMS) Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current TO-220AC ISOWATT220AC DPAK IFRM IFSM Tj Tstg Repetitive peak forward current Surge non repetitive forward current Storage temperature range tp=5µs F=5kHz square tp=10 ms sinusoidal Value 600 600 20 10 65 55 150 -65 to 150 Unit V V A A A A °C °C and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control circuitries. Packaged either in TO-220AC, ISOWATT220AC or in DPAK, these 600V devices are particularly intended for use on 240V domestic mains. 5A 600V 20ns 1.5V A K K A K TO-220AC STTA506D K ISOWATT220AC STTA506F A NC DPAK STTA506B Maximum operating junction temperature TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed : 3D 1/10 www.DataSheet4U.com www.DataSheet4U.com STTA506D/F/B THERMAL AND POWER DATA Symbol Rth(j-c) P1 Pmax Parameter Junction to case Conduction power dissipation • IF(AV) = 5A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Test conditions TO-220AC / DPAK ISOWATT220AC TO-220AC / DPAK Tc= 118°C ISOWATT220AC Tc= 96°C TO-220AC / DPAK Tc= 115°C ISOWATT220AC Tc= 90°C Value 3.5 6.0 9 10 Unit °C/W W W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Vto rd Test pulse : Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% Test conditions IF =5A VR =0.8 x VRRM Ip < 3.IAV Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Min Typ 1.25 0.75 Max 1.75 1.5 100 2 1.15 70 Unit V V µA mA V mΩ To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125°C VR = 400V dIF/dt = -40 A/µs dIF/dt = -500 A/µs Tj = 125°C VR = 400V dIF/dt = -500 A/µs IF =5A 3.0 11 IF =5A 0.55 Min Typ 20 50 A Max Unit ns IRM S factor TURN-ON SWITCHING Symbol tfr Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25°C IF =5 A, dIF/dt = 40 A/µs measured at 1.1 × VFmax Tj = 25°C IF =5A, dIF/dt = 40 A/µs Min Typ Max 500 V 10 Unit ns VFp 2/10 STTA506D/F/B Fig. 1: Switching OFF losses versus dI/dt. Fig. 2: Forward voltage drop versus forward current. 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0.1 VFM(V) MAXIMUM VALUES P3(W) 2.50 2.00 1.50 1.00 0.50 0.00 Tj=125°C F = 10kHz VR=600V Tj=125 o C dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 IFM(A) 1 10 100 Fig. 3: Peak reverse recovery current versus dIF/dt. IRM(A) Fig. 4: Reverse recovery time versus dIF/dt. trr(ns) 90% CONFIDENCE Tj=125 oC 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 180 160 140 120 IF=5A 90% CONFIDENCE Tj=125 oC VR=400V IF=10A VR=400V 100 80 IF=5A IF=2.5A IF=10A IF=2.5A 60 40 20 dIF/dt(A/ s) 100 200 300 400 500 600 700 800 900 1000 0 0 dIF/dt(A/ s) 100 200 300 400 500 600 700 800 900 1000 Fig. 5: Softness factor (tb/ta) versus dIF/dt. Fig. 6: Relative variation of dynamic parameters versus junction temperature (reference Tj = 125°C). 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 S factor Typical values Tj=125 oC IF<2xIF(av) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 dIF/dt(A/ s) IRM S factor VR=400V 0.6 0.5 0 25 50 75 100 0.0 0 Tj(oC) 125 150 100 200 300 400 500 600 700 800 900 1000 3/10 STTA506D/F/B Fig. 7: Transient peak forward voltage versus dIF/ft. 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 VFP(V) Fig. 8: Forward recovery time versus dIF/dt. tfr(ns) 500 90% CONFIDENCE Tj=125 C o 450 400 350 300 250 200 150 100 50 90% CONFIDENCE Tj=125 oC IF=IF(av) VFr=1.1*VF max. IF=IF(av) dIF/dt(A/ s) dIF/dt(A/ s) 10 20 30 40 50 60 70 80 90 100 0 0 10 20 30 40 50 60 70 80 90 100 Fig. 9: Relative cariation of thermal transient impedance junction to case versus pulse duration (TO-220AC and DPAK). Fig. 10: Relative cariation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AC.


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