CE1N2R

DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for actuator drives of OA equipments and electric equipments. PACKAGE DRAWING (UNIT: mm) FEATURES On-chip zener diode for surge voltage absorption On-chip bias resistor: R1 = 680 Ω, R2 = 10 kΩ Low power consumption during driving: VOL = 0.3 V MAX.@V1 = 5.0 V, IC = 0.5 A On-chip dumper diode for reverse cable ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings 60±10 60±10 15 ±2.0 ±3.0 0.03 1.0 150 −55 to +150 Unit V V V A A A W °C °C * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10846EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 CE1N2R ELECTRICAL CHARACTERISTICS (Ta = 25°C) ...