PS2002B

fttfEC NEC Electronics Inc. PS2002B PHOTO COUPLER DARLINGTON TRANSISTOR NEPOC SERIES Description The PS2002B is an optically coupled isolator containing a GaAsP light emitting diode and an NPN silicon Darlington-connected photo transistor. Package Dimensions 1A9.(205.3~640 ) .5A1 4 "5 6 Features o High-voltage isolation: 2500VDC min o High transfer ratio: 100% min o Economical, compact, plastic dual in-line package Applications o ECR o Automat o Replacement of pulse transformers o Replacement of mechanical and reed relays r ~ .1 (~ 0.39) I I 2.54 1+ (0.1)-.j Package Dimensions in Millimeters (Inches) 0.5 (0.02) 63-000421A Absolute Maximum Ratings TA=+25°C Diode Reverse Voltage, VR Forward Current, IF Power Dissipation, Po Transistor Collector to Emitter Voltage, VCEo Collector Current, Ic Power Dissipation, Po Isolation Voltagel, BV Storage Temperature, T8TG Operating Temperature, TOPT 7.0V 50mA 100mW 40V 50mA 100mW 2500VOC -55°C to +125°C -55°C to +100°C Pin Connection (Top View) 1. Anode 2. Cathode 3. NC 4. Emitter 5. Collector 6. NC 83-000385A 5-19 PS2002B NEe Electrical Characteristics TA = +25°C Limits Parameter Symbol Min Typ Max Diode Forward Voltage VF 1.9 Reverse Current IR Junction Capacitance C 2.0 100 Transistor Collector to Emitter ICED 400 Dark Current DC Current Gain hFE 5000 Coupled Current Transler CTR Ratio (Ic/IF) 100 Collector Saturation VCE(sat) 1.2 Voltage Isolation Resistance RH 1011 Isolation Capacita...